Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/12557
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dc.contributor.authorIntessar, K.Abd-
dc.date.accessioned2024-03-13T09:00:57Z-
dc.date.available2024-03-13T09:00:57Z-
dc.date.issued2010-
dc.identifier.issn2222-8373-
dc.identifier.urihttp://148.72.244.84:8080/xmlui/handle/xmlui/12557-
dc.description.abstractThese papers study the operation of etching poly-silicon wafer by using CF3Br plasma under condition 40mT, 1500 volt. Obtained on directional etching (anisotropic etching) with less selectivity, the directional etching caused lattice damages on the surface of the wafer.en_US
dc.language.isoenen_US
dc.publisheruniversity of Diyalaen_US
dc.titleAnisotropic etching of poly-silicon wafer by using CF3Br plasmaen_US
dc.typeArticleen_US
Appears in Collections:مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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