Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/2875
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dc.contributor.authorNawar T. Mohammed-
dc.contributor.authorJassim M. Mansour-
dc.contributor.authorKadhim A. Aadim-
dc.date.accessioned2023-10-10T09:10:31Z-
dc.date.available2023-10-10T09:10:31Z-
dc.date.issued2023-
dc.identifier.citationhttps://doi.org/10.24237/ASJ.01.01.592Cen_US
dc.identifier.issn2958-4612-
dc.identifier.urihttp://148.72.244.84:8080/xmlui/handle/xmlui/2875-
dc.description.abstractIn the present work, thin films of Lead sulphide (PbS) and different mixing ratios of Co (30%, 50% and 70%) were prepared by (PLD) technique at glass substrates at 1064nm wavelength with 600mj laser energy. The structural measurements were determined by X-ray diffraction studies for pure PbS and other mixing ratio . The present thin films were showed that the structure is face-centered-cubic. the grain size were found 17.74 nm for pure and increase to 31.3 and 55.67 nm when the mixing increase to 30% and 50% respectively and decreases to 39.57nm when mixed with 70% Co. The optical properties were measured at wavelength (300 - 1100) nm for PbS thin films. The absorption coefficient increases with increasing mixing ratio, The energy gap for pure PbS thin film was ( 2.43 ev) and increases to (2.54 ev) and then decreases to (2.42 ev) and (2.30 ev) with increasing of mixing ratio.en_US
dc.language.isoenen_US
dc.publisheruniversity of Diyalaen_US
dc.subjectLead sulphide, pulsed laser Deposited, XRD diffraction, optical properties, Electrical propertiesen_US
dc.titleStructural, Optical and Electrical Properties of (PbS: Co) Nanostructured Thin Films Synthesized by Pulsed Laser Ablation Deposition Techniqueen_US
dc.typeArticleen_US
Appears in Collections:مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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