Fabrication and Characterization of Sn1-XCuxO2 Thin Films Prepared by Chemical Spray Pyrolysis Technique

Abstract

In this work, Cu NPs have been prepared by (PLA) method to ablate the Cu metallic target. The laser ablation process is done at energy by 540 and 700 mJ) at wavelengths of 1064 and 532 nm. Sn1-xCuxO2 thin film prepared by used chemical spray pyrolysis technique at x = 0.03, 0.05, 0.07 and 0.09. XRD measurements of the prepared thin films showed that thin films have a polycrystalline with a tetragonal structure, the crystallite size average of thin films increases randomly as Cu NPs ratio increased, and it was maximum (~ 30.7nm) for the Sn0.93Cu0.07O2 thin film prepared. AFM results showed that the Sn0.93Cu0.07O2 thin films have maximum grain size with roughness and RMS of the thin films. The optical properties studied in the range (300- 900) nm, the transmittance increased as the wavelength increasing abuot (300-450) nm, it was found that the lesser transmittance (79%) for Sn0.95Cu0.05O2, the energy band gap firstly is decreasing after that is increasing as copper NPs ratio increasing, as its value about (4.05-3.85) eV.