Doping Induced Changes in the Electronic Transitions of Pure and Sn-Doped ZnO Thin Films

Dr. Sami Salman Chiad, Dr. Saad Farhan Oboudi; Dr. Ziad Abdulahad Toma, Dr. Nadir Fadhil Habubi

Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/8709

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DC Field	Value	Language
dc.contributor.author	Dr. Sami Salman Chiad, Dr. Saad Farhan Oboudi	-
dc.contributor.author	Dr. Ziad Abdulahad Toma, Dr. Nadir Fadhil Habubi	-
dc.date.accessioned	2023-11-09T07:37:54Z	-
dc.date.available	2023-11-09T07:37:54Z	-
dc.date.issued	2013-05-01	-
dc.identifier.issn	2222-8373	-
dc.identifier.uri	http://148.72.244.84:8080/xmlui/handle/xmlui/8709	-
dc.description.abstract	The un-doped and tin (Sn) doped ZnO films were deposited by spray pyrolysis technique onto glass substrates. 0.1 M solution of zinc acetate in a mixture of ethanol and deionised water. Dopant source was tin chloride SnCl2.2H2O. The atomic percentage of dopant in solution was 2% and 4%. The effect of tin doping on the electronic transitions of ZnO films was studied. The average transmittance values for the films were (76, 84, 88) % for ZnO, ZnO:Sn 2% and ZnO:Sn 4% respectively. The optical band gaps of the films were calculated. The band gap of un-doped sample was 3.36 eV, this value decreased slightly with increasing doping concentration and became 3.17 eV for ZnO:Sn 2% and 3.1eV for ZnO:Sn 4%.	en_US
dc.description.sponsorship	https://djps.uodiyala.edu.iq/pages?id=442	en_US
dc.language.iso	en	en_US
dc.publisher	university of Diyala	en_US
dc.subject	Sn doped ZnO, Spray pyrolysis, transparent conducting oxide (TCO)	en_US
dc.title	Doping Induced Changes in the Electronic Transitions of Pure and Sn-Doped ZnO Thin Films	en_US
dc.type	Article	en_US
Appears in Collections:	مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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