Chemical etching of Si-p-type wafers using KOH

Abstract

In this paper wet etching was used to etch Si-wafers by chemical solution KOH at different temperature and concentrations, the results showed: - decreasing of the etching rate at higher KOH concentrations producing smooth surface, on the other hand by observing the etching rate as a function of temperature it shows that the etching rate increases with the increase of the etching temperature producing roughness surface.