Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/12557
Title: Anisotropic etching of poly-silicon wafer by using CF3Br plasma
Authors: Intessar, K.Abd
Issue Date: 2010
Publisher: university of Diyala
Abstract: These papers study the operation of etching poly-silicon wafer by using CF3Br plasma under condition 40mT, 1500 volt. Obtained on directional etching (anisotropic etching) with less selectivity, the directional etching caused lattice damages on the surface of the wafer.
URI: http://148.72.244.84:8080/xmlui/handle/xmlui/12557
ISSN: 2222-8373
Appears in Collections:مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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