Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/5907
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dc.contributor.authorNadia M. Jassim-
dc.date.accessioned2023-10-22T08:48:40Z-
dc.date.available2023-10-22T08:48:40Z-
dc.date.issued2019-
dc.identifier.citationhttps://djes.info/index.php/djesen_US
dc.identifier.issn1999-8716-
dc.identifier.urihttp://148.72.244.84:8080/xmlui/handle/xmlui/5907-
dc.description.abstractHighly pure and crystalline CdSxSe1 -x nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdSxSe1 -x nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materialsen_US
dc.language.isoenen_US
dc.publisherUniversity of Diyala – College of Engineeringen_US
dc.subjectChemical Vapor Deposition (CVD)en_US
dc.subjectSemiconductor Nanomaterialen_US
dc.subjectCdSen_US
dc.subjectCdSeen_US
dc.subjectField Emission Scanning Electron Microscopy (FESEM)en_US
dc.subjectResolution Transmission Electron Microscopy (HRTEM)en_US
dc.titleSynthesis and Optical Properties of CdSxSe1-x Semiconductor Nanomaterials by Chemical Vapor Deposition Methoden_US
dc.typeArticleen_US
Appears in Collections:مجلة ديالى للعلوم الهندسية / Diyala Journal of Engineering Sciences (DJES)

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