Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/5907
Title: Synthesis and Optical Properties of CdSxSe1-x Semiconductor Nanomaterials by Chemical Vapor Deposition Method
Authors: Nadia M. Jassim
Keywords: Chemical Vapor Deposition (CVD)
Semiconductor Nanomaterial
CdS
CdSe
Field Emission Scanning Electron Microscopy (FESEM)
Resolution Transmission Electron Microscopy (HRTEM)
Issue Date: 2019
Publisher: University of Diyala – College of Engineering
Citation: https://djes.info/index.php/djes
Abstract: Highly pure and crystalline CdSxSe1 -x nanostructures have been successfully synthesized via Chemical Vapor Deposition (CVD) method, changing the components of x, in order to adjust the band gap of materials, and the relationship with the lattice constant. Using X-ray Diffraction (XRD) to characterize the phase structures and elemental compositions of the samples, and using Field Emission Scanning Electron Microscopy (FESEM) to observe the surface morphology of CdSxSe1 -x nanomaterials and confirm the VLS growth mechanism. Using the High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) to analyze the crystal structure and the growth direction of the materials
URI: http://148.72.244.84:8080/xmlui/handle/xmlui/5907
ISSN: 1999-8716
Appears in Collections:مجلة ديالى للعلوم الهندسية / Diyala Journal of Engineering Sciences (DJES)

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