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http://148.72.244.84:8080/xmlui/handle/xmlui/5974Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | M. Tawfeek | - |
| dc.contributor.author | Mustafa K. Jassim | - |
| dc.contributor.author | Firas M. Hady | - |
| dc.contributor.author | Rafah I. Nori | - |
| dc.date.accessioned | 2023-10-22T10:34:41Z | - |
| dc.date.available | 2023-10-22T10:34:41Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.issn | 2222-8373 | - |
| dc.identifier.uri | http://148.72.244.84:8080/xmlui/handle/xmlui/5974 | - |
| dc.description.abstract | Sputtering yield behaviour of target bombarded by Argon ions plasma is studied through the reduction of TRIM ( Transport of Ions in Matter ) simulation data . The angular dependence of normalized sputtering yield of GaAs is studied. Further the effect of increasing ion energy, the effect of increasing ion numbers , the influence of GaAs width, and the effect of changing the surface binding energy of elements composed GaAs target upon the sputter yield are studied. It was found that the entire parameters mentioned have very strong effects on the sputtering yield of GaAs. | en_US |
| dc.description.sponsorship | https://djps.uodiyala.edu.iq/ | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | University of Diyala | en_US |
| dc.subject | sputtering yield, TRIM ( Transport of Ions in Matter ) program, Argon ions, GaAs | en_US |
| dc.title | A Computer Simulation Study of Sputtering Yield of Target Bombarded by Argon Ions | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 132-141 E.pdf | 998.75 kB | Adobe PDF | View/Open |
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