Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/5974
Title: A Computer Simulation Study of Sputtering Yield of Target Bombarded by Argon Ions
Authors: M. Tawfeek
Mustafa K. Jassim
Firas M. Hady
Rafah I. Nori
Keywords: sputtering yield, TRIM ( Transport of Ions in Matter ) program, Argon ions, GaAs
Issue Date: 2015
Publisher: University of Diyala
Abstract: Sputtering yield behaviour of target bombarded by Argon ions plasma is studied through the reduction of TRIM ( Transport of Ions in Matter ) simulation data . The angular dependence of normalized sputtering yield of GaAs is studied. Further the effect of increasing ion energy, the effect of increasing ion numbers , the influence of GaAs width, and the effect of changing the surface binding energy of elements composed GaAs target upon the sputter yield are studied. It was found that the entire parameters mentioned have very strong effects on the sputtering yield of GaAs.
URI: http://148.72.244.84:8080/xmlui/handle/xmlui/5974
ISSN: 2222-8373
Appears in Collections:مجلة ديالى للعلوم الاكاديمية / Academic Science Journal (Acad. Sci. J.)

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