Please use this identifier to cite or link to this item: http://148.72.244.84:8080/xmlui/handle/xmlui/14105
Title: الرقيقة cu in se0.8 te0.2 .culn se0 te0.8 دراسة بعض الخواص الكهربائية لاغشية
Authors: صباح انور سلمان
تحسين حسين مبارك
اسعد احمد كامل
Issue Date: 2006
Publisher: مجلة الفتح للعلوم التربوية والنفسية
Citation: http://148.72.244.84:8080/jspui/password-login
Series/Report no.: 10;2
Abstract: It had been measuring the resistivity for the CuIn (Se0.2Te0.8)2 and CuIn (Se0.8Te0.2)2 thin films which perpetrated by vacuum thermal evaporation with a thickness of (225±5nm) in the thermal range of (300–473K) for both as deposited and annealed samples at temperatures (373K, 473K) for one hour in the existence vacuum (10-2Torr). It had been calculation activation energies for these films before and after annealing.
URI: http://148.72.244.84:8080/xmlui/handle/xmlui/14105
ISSN: 1996-8752
Appears in Collections:مجلة الفتح / The Al-Fateh Journal for Educational and Psychological Research

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